Dually crosslinkable SiO2@polysiloxane core–shell nanoparticles for flexible gate dielectric insulators
نویسندگان
چکیده
منابع مشابه
Titanium dioxide (TiO2)-based gate insulators
Titanium dioxide has been deposited on silicon for use as a high-permittivity gate insulator in an effort to produce low-leakage films with oxide equivalent thicknesses below 2.0 nm. Excellent electrical characteristics can be achieved, but TEM and electrical measurements have shown the presence of a low-resistivity interfacial layer that we take to be SiO2. The leakage current follows several ...
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ژورنال
عنوان ژورنال: RSC Advances
سال: 2017
ISSN: 2046-2069
DOI: 10.1039/c6ra28230j